GaN HEMT DC I-V Device Model for Accurate RF Rectifier Simulation

Recently, various high-efficiency RF rectifiers have been proposed. In this article, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of ID-VDS characteristics in the third-quadrant region (both drain voltage and drain current are negative). Based on measured characteristic data of an actual GaN HEMT, the device parameters for this model have been decided, and the advantage of the new device model has been confirmed

4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching

A 4.5-/4.9-GHz band-selective GaN HEMT high-efficiency power amplifier has been designed and evaluated for next-generation wireless communication systems. An optimum termination impedance for each high-efficiency operation band was changed by using PIN diodes inserted into a harmonic treatment circuit at the output side. In order to minimize the influence of the insertion loss of the PIN diodes, an additional line is arranged in parallel with the open-ended stub used for second harmonic treatment, and the line and stub are connected with the PIN diodes to change the effective characteristic impedance. The fabricated GaN HEMT amplifier achieved a maximum power-added efficiency of 57% and 66% and a maximum drain efficiency of 62% and 70% at 4.6 and 5.0GHz, respectively, with a saturated output power of 38dBm, for each switched condition

Microwave Characteristics of an Independently Biased 3-stack InGaP/GaAs HBT Configuration

This paper investigates various important microwave characteristics of an independently biased 3-stack InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) chip at both small-signal and large-signal operation. By taking the advantage of the independently biased functionality, bias condition for individual transistor can be adjusted flexibly, resulting in the ability of independent control for both small-signal and large-signal performances. It was found that at small-signal operation stability and isolation characteristics of the proposed configuration can be significantly improved by controlling bias condition of the second-stage and the third-stage transistors while at large-signal operation its linearity and power gain can be improved through controlling the bias condition of the first-stage and the third-stage transistors. To demonstrate the benefits of using such an independently biased configuration, a measured optimum large-signal performance at an operation frequency of 1.6 GHz under an optimum bias condition for the high gain, low distortion were obtained as: PAE = 23.5 %, Pout = 12 dBm; Gain = 32.6 dB at IMD3 = -35 dBc. Moreover, to demonstrate the superior advantage of the proposed configuration, its small-signal and large-signal performance were also compared to that of a single stage common-emitter, a conventional 2-stack, an independently biased 2-stack and a conventional 3-stack configuration. The compared results showed that the independently biased 3-stack is the best candidate among the configurations for various wireless communications applications

Anisotropic uniaxial pressure response of the Mott insulator Ca2RuO4

We have investigated the in-plane uniaxial pressure effect on the antiferromagnetic Mott insulator Ca2RuO4 from resistivity and magnetization measurements. We succeeded in inducing the ferromagnetic metallic phase at lower critical pressure than by hydrostatic pressure, indicating that the flattening distortion of the RuO6 octahedra is more easily released under in-plane uniaxial pressure. We also found a striking in-plane anisotropy in the pressure responses of various magnetic phases: Although the magnetization increases monotonically with pressure diagonal to the orthorhombic principal axes, the magnetization exhibits peculiar dependence on pressure along the in-plane orthorhombic principal axes. This peculiar dependence can be explained by a qualitative difference between the uniaxial pressure effects along the orthorhombic a and b axes, as well as by the presence of twin domain structures.Comment: Accepted for publication in Phys. Rev.

Microstructure Evolution of Carbon Steel by Hot Equal Channel Angular Extrusion

AbstractAn equal channel angular extrusion (ECAE) process equipment which enable a repetitive hot ECAE process without ejecting workpiece with route A and C are developed. This equipment has T-shape 3 actuator axis in horizontal plane and is capable of simulating the formation of fine grained steels in the transformation route. Each actuator (mechanical servo press unit) can be controlled by both position and load with programed motion. The outline of the developed ECAE equipment and the results of preliminary application of the ECAE equipment at an elevated temperature at various pressing speeds ranging from 2 to 32mm/s for a Nb alloyed steel are present. 2 passes via route C at ram speed 16mm/s are also conducted. The ferrite grain size of about 2μm steel is obtained throughout the workpiece at ram speed of 32mm/s, preheated temperature 960oC

Loss of linker histone H1 in cellular senescence

Cellular senescence is a tumor-suppressing mechanism that is accompanied by characteristic chromatin condensation called senescence-associated heterochromatic foci (SAHFs). We found that individual SAHFs originate from individual chromosomes. SAHFs do not show alterations of posttranslational modifications of core histones that mark condensed chromatin in mitotic chromosomes, apoptotic chromatin, or transcriptionally inactive heterochromatin. Remarkably, SAHF-positive senescent cells lose linker histone H1 and exhibit increased levels of chromatin-bound high mobility group A2 (HMGA2). The expression of N-terminally enhanced green fluorescent protein (EGFP)–tagged histone H1 induces premature senescence phenotypes, including increased levels of phosphorylated p53, p21, and hypophosphorylated Rb, and a decrease in the chromatin-bound endogenous histone H1 level but not in p16 level accumulation or SAHF formation. However, the simultaneous ectopic expression of hemagglutinin-tagged HMGA2 and N-terminally EGFP-tagged histone H1 leads to significant SAHF formation (P < 0.001). It is known that histone H1 and HMG proteins compete for a common binding site, the linker DNA. These results suggest that SAHFs are a novel type of chromatin condensation involving alterations in linker DNA–binding proteins